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Número de pieza | W21NM60N | |
Descripción | STW21NM60N | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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STP/F21NM60N-STW21NM60N
STB21NM60N-STB21NM60N-1
N-channel 600V - 0.17Ω - 17A TO-220/FP/D2/I2PAK/TO-247
Second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
650V
650V
650V
650V
650V
< 0.22Ω
< 0.22Ω
< 0.22Ω
< 0.22Ω
< 0.22Ω
17A
17A
17A(1)
17A
17A
1. Limited by wire bonding
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
TO-247
Internal schematic diagram
Order codes
Part number
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
April 2007
Marking
B21NM60N
B21NM60N
F21NM60N
P21NM60N
W21NM60N
Package
D2PAK
I2PAK
TO-220FP
TO-220
TO-247
Rev 6
Packaging
Tape & reel
Tube
Tube
Tube
Tube
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1 page www.DataSheet.co.kr
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17A, VGS = 0
ISD = 17A, VDD = 100V
di/dt=100A/µs
(see Figure 19)
ISD = 17A,VDD = 100V
di/dt=100A/µs,
Tj = 150°C
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
17
68
0.91
372
4.6
25
A
A
V
ns
µC
A
486 ns
6.3 µC
26 A
5/18
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STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Package mechanical data
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
11/18
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11 Page |
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Número de pieza | Descripción | Fabricantes |
W21NM60N | STW21NM60N | STMicroelectronics |
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