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PDF SI4496DY Data sheet ( Hoja de datos )
| Número de pieza | SI4496DY | |
| Descripción | R - C Thermal Model Parameters | |
| Fabricantes | Vishay | |
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R-C Thermal Model Parameters
Si4496DY_RC
Vishay Siliconix
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
RT1 2.3490 N/A
RT2 29.5589 N/A
RT3 32.0670 N/A
RT4 26.1202 N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
CT1 1.1969 m N/A
CT2 32.0544 m N/A
CT3 1.4071 N/A
CT4 3.6901 N/A
Foot
250.9288 m
6.7329
9.1880
1.7701
Foot
563.0696 µ
13.6449 m
174.2752 m
4.8071 m
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 74109
Revision 02-Sep-05
www.vishay.com
1
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