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PDF SI4462DY Data sheet ( Hoja de datos )
| Número de pieza | SI4462DY | |
| Descripción | N-Channel 200-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
Si4462DY
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
0.480 @ VGS = 10 V
0.510 @ VGS = 6.0 V
ID (A)
1.50
1.45
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized for Fast Switching
APPLICATIONS
D Primary Side Switch
D
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Single Avalanch Current
Single Avalanch Energy
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
1.50
1.20
2.1
2.5
1.6
200
"20
5
1.5
0.11
-55 to 150
1.15
0.92
1.1
1.3
0.85
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72093
S-22098—Rev. A, 02-Dec-02
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
70
20
Maximum
50
85
24
Unit
_C/W
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Datasheet pdf - http://www.DataSheet4U.net/
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New Product
Si4462DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1 0.05
0.02
0.01
10- 4
Single Pulse
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72093
S-22098—Rev. A, 02-Dec-02
www.vishay.com
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Datasheet pdf - http://www.DataSheet4U.net/
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