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FGH60N60SFD Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGH60N60SFD
Beschreibung Field Stop IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 



Gesamt 9 Seiten
		
FGH60N60SFD Datasheet, Funktion
www.DataSheet.co.kr
FGH60N60SFD
600V, 60A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =2.3V @ IC = 60A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
August 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test, Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
± 20
120
60
180
378
151
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.33
1.1
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH60N60SFD Rev. A
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/






FGH60N60SFD Datasheet, Funktion
www.DataSheet.co.kr
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
300
100
tr
10
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
Figure 15. Turn-on Characteristics vs.
Collector Current
500
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
100
tr
td(on)
Figure 14. Turn-off Characteristics vs.
Gate Resistance
6000
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
td(off)
100
tf
10
0 10 20 30 40 50
Gate Resistance, RG []
Figure 16. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
td(off)
100
tf
10
0 20 40 60 80 100 120
Collector Current, IC [A]
Figure 17. Switching Loss vs Gate Resistance
1200
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
Eon
1 Eoff
0.5
0 10 20 30 40 50
Gate Resistance, RG []
10
0 20 40 60 80 100 120
Collector Current, IC [A]
Figure 18. Switching Loss vs Collector Current
30
Common Emitter
VGE = 15V, RG = 5
10 TC = 25oC
TC = 125oC
Eon
1 Eoff
0.1
0
20 40 60 80 100
Collector Current, IC [A]
120
FGH60N60SFD Rev. A
6
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/

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