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VF10150S Schematic ( PDF Datasheet ) - Vishay

Teilenummer VF10150S
Beschreibung High-Voltage Trench MOS Barrier Schottky Rectifier
Hersteller Vishay
Logo Vishay Logo 




Gesamt 4 Seiten
VF10150S Datasheet, Funktion
www.DataSheet.co.kr
New Product
VF10150S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
TMBS ®
ITO-220AB
123
VF10150S
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
150 V
IFSM
120 A
VF at IF = 10 A
0.69 V
TJ max.
150 °C
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Voltage rate of change (rated VR)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VF10150S
150
10
120
10 000
1500
- 55 to + 150
UNIT
V
A
A
V/μs
V
°C
Document Number: 89267 For technical questions within your region, please contact one of the following:
Revision: 10-Nov-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/





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