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PDF SI7272DP Data sheet ( Hoja de datos )
| Número de pieza | SI7272DP | |
| Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Dual N-Channel 30-V (D-S) MOSFET
Si7272DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0093 at VGS = 10 V
0.0124 at VGS = 4.5 V
ID (A)a
25
25
Qg (Typ.)
8.2
PowerPAK SO-8
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET® Power MOSFET
• PWM Optimized
APPLICATIONS
• System Power DC/DC
6.15 mm
D1
8 D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7272DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
30
± 20
25a
25a
15b, c
12b, c
60
19
3.0b, c
22
14
3.6b, c
2.3b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typ.
26
4
Max.
35
5.5
Unit
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 69026
S09-0269-Rev. B, 16-Feb-09
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 25
Si7272DP
Vishay Siliconix
40 20
30 Package Limited
20
15
10
10 5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69026
S09-0269-Rev. B, 16-Feb-09
www.vishay.com
5
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| PDF Descargar | [ Datasheet SI7272DP.PDF ] | |
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