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PDF SI5456DU Data sheet ( Hoja de datos )
| Número de pieza | SI5456DU | |
| Descripción | N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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N-Channel 20-V (D-S) MOSFET
Si5456DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.010 at VGS = 10 V
0.0135 at VGS = 4.5 V
PowerPAK ChipFET Single
1
2
D3
DD
4
8D
7D
6S
D
G
S
5
Bottom View
FEATURES
ID (A)a
12
12
Qg (Typ.)
9.8 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
D
APPLICATIONS
Marking Code
• Load Switch
• DC/DC
AC XXX
Lot Traceability
and Date Code
G
Part # Code
S
Ordering Information: Si5456DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
IS
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
20
± 20
12a
12a
12a, b, c
10.8b, c
50
12a
2.6b, c
31
20
3.1b, c
2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
34
3
40
°C/W
4
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 35
30
40
25
30 20
20
Package Limited
10
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si5456DU
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
www.vishay.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI5456DU.PDF ] | |
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