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GB75YF120UT Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer GB75YF120UT
Beschreibung IGBT Fourpack Module
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logo 




Gesamt 10 Seiten
GB75YF120UT Datasheet, Funktion
www.DataSheet.co.kr
GB75YF120UT
Vishay High Power Products
IGBT Fourpack Module, 75 A
ECONO2 4PACK
PRODUCT SUMMARY
VCES
IC at TC = 67 °C
VCE(on) (typical)
1200 V
75 A
3.4 V
FEATURES
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Copper baseplate
• Low stray inductance design
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
HF welding
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
See fig. C.T.5
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Diode maximum forward current
Gate to emitter voltage
IFM
VGE
Maximum power dissipation (IGBT)
PD
Maximum operating junction temperature
Storage temperature range
Isolation voltage
TJ
TStg
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
MAX.
1200
100
67
200
200
60
40
150
± 20
480
270
150
- 40 to + 125
AC 2500 (MIN)
UNITS
V
A
V
W
°C
V
Document Number: 93172
Revision: 13-Jan-10
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/






GB75YF120UT Datasheet, Funktion
www.DataSheet.co.kr
GB75YF120UT
Vishay High Power Products IGBT Fourpack Module, 75 A
120
100
5 ohm
80
60
27 ohm
40
20 47 ohm
0
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IF (A)
Fig. 17 - Typical Diode IRR vs. IF
TJ = 125 °C
100
80
60
40
20
0
400
800
1200
1600
2000
dIF / dt (A/ μs)
Fig. 18 - Typical Diode IRR vs. dIF/dt
VCC = 600 V; IF = 75 A
100
80
60
40
20
0
0
10 20 30 40 50
RG (Ω)
Fig. 19 - Typical Diode IRR vs. Rg
TJ = 125 °C; IF = 75 A
16
14
12
10 typical value
8
6
4
2
0
0 100 200 300 400 500 600 700
QG, Total Gate Charge (nC)
Fig. 20 - Typical Gate Charge vs. VGE
ICE = 5.0 A; L = 600 μH
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.001
0.01
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
10
www.vishay.com
6
For technical questions, contact: [email protected]
Document Number: 93172
Revision: 13-Jan-10
Datasheet pdf - http://www.DataSheet4U.net/

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