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PDF GB50YF120N Data sheet ( Hoja de datos )
| Número de pieza | GB50YF120N | |
| Descripción | IGBT Fourpack Module | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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GB50YF120N
Vishay High Power Products
IGBT Fourpack Module, 50 A
ECONO2 4PACK
PRODUCT SUMMARY
VCES
IC at TC = 66 °C
VCE(on) (typical)
1200 V
50 A
3.49 V
FEATURES
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Copper baseplate
• Low stray inductance design
• Speed 8 to 60 kHz
• Designed and qualified for industrial market
RoHS
COMPLIANT
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
HF welding
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
See fig. C.T.5
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Diode maximum forward current
Gate to emitter voltage
IFM
VGE
Maximum power dissipation (IGBT)
PD
Maximum operating junction temperature
Storage temperature range
Isolation voltage
TJ
TStg
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
MAX.
1200
66
44
150
150
40
25
150
± 20
330
180
150
- 40 to + 125
AC 2500 (MIN)
UNITS
V
A
V
W
°C
V
Document Number: 93653
Revision: 01-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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GB50YF120N
IGBT Fourpack Module, 50 A Vishay High Power Products
1
TJ = 125°C
0.1
0.01
TJ = 25°C
0.001
400
600
800
1000
1200
VCES (V)
Fig. 11 - Typical Zero Gate Voltage Collector Current
5.5
5 TJ = 25°C
4.5
4
3.5 TJ = 125°C
3
2.5
2
0 0.2 0.4 0.6 0.8 1
IC (mA)
Fig. 12 - Typical Threshold Voltage
4.5
4
3.5 EON
3
2.5
EOFF
2
1.5
1
0.5
0
20 40 60 80 100
IC (A)
Fig. 13 - Typical Energy Loss vs. IC
TJ = 125 °C; L = 200 µH; VCE = 600 V, RG= 5 Ω; VGE = 15 V
1
tF
0.1
tdOFF
tdON
tR
0.01
0
20 40 60 80 100
IC (A)
Fig. 14 - Typical Switching Time vs. IC
TJ = 125 °C; L = 200 µH; VCE = 600 V, RG = 5 Ω; VGE = 15 V
12
10
8 125°C
6
4 25°C
2
0
0 20 40 60 80 100
dIF/ dt (A/µs)
Fig. 15 - Typical Diode IREC vs. dIF/dt
VCC = 600 V; IF = 50 A
800
700
600
500
125°C
400
300
200
25°C
100
0
0 20 40 60 80 100
dIF/ dt (A/µs)
Fig. 16 - Typical Diode trr vs. dIF/dt
VCC = 600 V; IF = 50 A
Document Number: 93653
Revision: 01-Sep-08
For technical questions, contact: [email protected]
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
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| PDF Descargar | [ Datasheet GB50YF120N.PDF ] | |
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