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GB50XF120K Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer GB50XF120K
Beschreibung IGBT SIXPACK MODULE
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 8 Seiten
GB50XF120K Datasheet, Funktion
www.DataSheet.co.kr
IGBT SIXPACK MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
• UL Approved E78996
ECONO2 6PACK
Absolute Maximum Ratings
Parameter
VCES
IC @ Tc=25°C
IC @ Tc=80°C
ICM
ILM
IF @ Tc=25°C
IF @ Tc=80°C
IFM
VGE
PD @ Tc=25°C
PD @ Tc=80°C
TJ
TSTG
VISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref. Fig. C.T.5)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Pulsed Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (IGBT and Diode)
Maximum Power Dissipation (IGBT and Diode)
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Bulletin PD - 94567 rev.B 08/03
GB50XF120K
VCES = 1200V
IC = 50A @ TC=80°C
tsc > 10µs @ TJ=150°C
VCE(on) typ. = 2.45V
Max.
1200
75
50
150
150
75
50
150
±20
329
184
150
-40 to +125
AC 2500 (MIN)
Units
V
A
V
W
°C
V
Thermal and Mechanical Characteristics
RθJC (IGBT)
RθJC (Diode)
RθCS (Module)
Parameter
Junction-to-Case IGBT
Junction-to-Case Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Min
Typical
Maximum Units
-
-
0.38
°C/W
- - 0.70
- 0.05 -
2.7 - 3.3 N*m
- 170 - g
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Datasheet pdf - http://www.DataSheet4U.net/






GB50XF120K Datasheet, Funktion
www.DataSheet.co.kr
GB50XF120K
Bulletin PD - 94567 rev.B 08/03
120
100
80
60
40
20
0
0 500 1000 1500 2000 2500
diF /dt (A/µs)
Fig. 19- Typical Diode IRR vs. diF/dt ; VCC= 600V;
VGE= 15V; ICE= 50A; TJ = 125°C
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= τi/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.052 0.000444
τ3τ3 0.062 0.005937
0.266 0.019420
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01 0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= τi/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.116 0.000372
τ3τ3 0.201 0.010642
0.382 0.034977
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
1
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