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Teilenummer | GA100NA60U |
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Beschreibung | INSULATED GATE BIPOLAR TRANSISTOR | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 10 Seiten www.DataSheet.co.kr
PD - 94290
INSULATED GATE BIPOLAR TRANSISTOR
GA100NA60U
Ultra-FastTM Speed IGBT
Features
• UltraFastTM: Optimized for minimum saturation
voltage and operating frequencies up to 40 kHz in
hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolated package (2,500 Volt AC/RMS)
• Very low internal inductance (≤ 5 nH typ.)
• Industry standard outline
2
Benefits
• Designed for increased operating efficiency in power
conversion: PFC, UPS, SMPS, Welding, Induction heating
• Lower overall losses available at frequencies ≥ 20kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
3
VCES = 600V
1 VCE(on) typ. = 1.49V
@VGE = 15V, IC = 50A
4
SOT-227
Max.
600
100
50
200
200
± 20
2500
250
100
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
Wt
www.irf.com
Junction-to-Case, IGBT
Thermal Resistance, Junction-to-Case , Diode
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
–––
–––
0.05
30
Max.
0.50
1.0
–––
–––
Units
°C/W
gm
1
7/27/01
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
GA100NA60U
1000
100
TJ = 150°C
TJ = 125°C
TJ = 25°C
10
1
0.0 0.4 0.8 1.2 1.6 2.0
Forwa rd V oltag e D ro p - V F M (V )
Fig. 12 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
150 100
IF = 100A
IF = 50A
120
IF = 25A
IF = 100A
IF = 50A
IF = 25A
90
10
60
30
VR = 200V
TJ = 12 5°C
TJ = 2 5 °C
0
100
di f /dt - (A/µs)
1000
Fig. 13 - Typical Reverse Recovery vs. dif/dt
6
VR = 2 00 V
TJ = 125°C
TJ = 25°C
1
100
di f /dt - (A/µs)
1000
Fig. 14 - Typical Recovery Current vs. dif/dt
www.irf.com
Datasheet pdf - http://www.DataSheet4U.net/
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ GA100NA60U Schematic.PDF ] |
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