Datenblatt-pdf.com


GT100NA120UX Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer GT100NA120UX
Beschreibung IGBT
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logo 




Gesamt 10 Seiten
GT100NA120UX Datasheet, Funktion
www.DataSheet.co.kr
GT100NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 100 A, 25 °C
1200 V
100 A at 71 °C
2.36 V
FEATURES
• Trench IGBT technology
• Very low VCE(on)
• Square RBSOA
• HEXFRED® clamping diode
• 10 μs short circuit capability
• Fully isolated package
• Speed 4 kHz to 30 kHz
• Very low internal inductance (5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Power dissipation, IGBT
PD
Power dissipation, diode
RMS isolation voltage
PD
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
1200
134
92
270
270
87
59
± 20
463
260
338
190
2500
UNITS
V
A
V
W
V
Document Number: 93100 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/






GT100NA120UX Datasheet, Funktion
www.DataSheet.co.kr
GT100NA120UX
Vishay Semiconductors "High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
1
0.1
0.01
0.001
0.00001
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
DC D = 0.01
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
0.1
0.01
0.001
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
DC D = 0.01
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
10
10
www.vishay.com
6
For technical questions within your region, please contact one of the following: Document Number: 93100
Revision: 22-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/

6 Page







SeitenGesamt 10 Seiten
PDF Download[ GT100NA120UX Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
GT100NA120UXIGBTVishay Siliconix
Vishay Siliconix

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche