|
|
PDF GT100DA120U Data sheet ( Hoja de datos )
| Número de pieza | GT100DA120U | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de GT100DA120U (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
www.DataSheet.co.kr
GT100DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
SOT-227
PRODUCT SUMMARY
VCES
IC DC
VCE(on) typical at 100 A, 25 °C
1200 V
100 A at 119 °C
1.73 V
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft reverse
recovery
• TJ maximum = 150 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Very low VCE(on)
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
Isolation voltage
VCES
IC (1)
ICM
ILM
IF
IFSM
VGE
PD
PD
VISOL
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 119 °C
TC = 25 °C
TC = 119 °C
Any terminal to case, t = 1 min
1200
258
174
450
450
50
34
180
± 20
893
221
176
44
2500
Note
(1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
UNITS
V
A
V
W
V
Document Number: 93196 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
GT100DA120U
Vishay Semiconductors
40
35
30
25
20 Eon
15
10 Eoff
5
0 10 20 30 40 50
93196_11
10 000
Rg (Ω)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH,
VCC = 720 V, VGE = 15 V
1000
td(on)
tf
td(off)
100 tr
10
0
10 20 30 40 50
93196_12
Rg (Ω)
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 720 V,
IC = 100 A, VGE = 15 V
3000
310
290
270
250
230
210
190
170
150
130
110
90
100
93196_13
TJ = 125 °C
TJ = 25 °C
1000
dIF/dt (A/μs)
Fig. 13 - Typical trr Diode vs. dIF/dt
Vrr = 400 V, IF = 50 A
45
40
35
30
25
20
15
10
5
0
100
93196_14
TJ = 125 °C
TJ = 25 °C
1000
dIF/dt (A/μs)
Fig. 14 - Typical Irr Diode vs. dIF/dt
Vrr = 400 V, IF = 50 A
2500
2000
TJ = 125 °C
1500
1000
500
TJ = 25 °C
0
100
1000
93196_15
dIF/dt (A/μs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt
Vrr = 400 V, IF = 50 A
Document Number: 93196 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GT100DA120U.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GT100DA120U | Insulated Gate Bipolar Transistor | Vishay Siliconix |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |