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Teilenummer | BU113 |
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Beschreibung | Silicon NPN Power Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BU113
DESCRIPTION
·Collector-Emitter Voltage-
:VCEX(SUS) = 700V(Min.)
·Collector Current- IC= 10A
APPLICATIONS
·Designed for use in horizontal deflection output state of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Emitter Voltage
700 V
VCEX
Collector-Emitter Voltage VBE= -5V
700
V
VEBO
Emitter-Base Voltage
10 V
IC Collector Current-Continuous
10 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@TC= 90℃
Tj Junction Temperature
Tstg Storage Temperature Range
4A
30 W
150 ℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.0 ℃/W
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ BU113 Schematic.PDF ] |
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