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Teilenummer | BU111 |
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Beschreibung | Silicon NPN Power Transistor | |
Hersteller | Inchange Semiconductor | |
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Gesamt 2 Seiten www.DataSheet.co.kr
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU111
DESCRIPTION
·Collector-Emitter Sustaining Voltag-
: VCEO(SUS)= 300V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2.5A
APPLICATIONS
·Designed for use in color TV receivers chopper supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
300 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
6A
ICM Collector Current-Peak Repetitive
8
A
IBB Base Current
Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
3
50
200
-65~200
A
W
℃
℃
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ BU111 Schematic.PDF ] |
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