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PDF LE25FS406 Data sheet ( Hoja de datos )
| Número de pieza | LE25FS406 | |
| Descripción | 4M-bit (512K X 8) Serial Flash Memory | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LE25FS406 (archivo pdf) en la parte inferior de esta página. Total 22 Páginas | ||
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www.DataSheet.co.kr
Ordering number : ENA1577D
LE25FS406
CMOS IC
4M-bit (512K×8) Serial Flash Memory
Overview
The LE25FS406 is a SPI bus flash memory device with a 4M bit (512K × 8-bit) configuration. It uses a single 1.8V
power supply. While making the most of the features inherent to a serial flash memory device, the LE25FS406 is housed
in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications
such as portable information devices, which are required to have increasingly more compact dimensions. The
LE25FS406 also has a small sector erase capability which makes the device ideal for storing parameters or data that have
fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.
Features
• Read/write operations enabled by single 1.8V power supply: 1.65 to 2.10V supply voltage range
• Operating frequency : 30MHz
• Temperature range : 0 to 70°C / –40 to +85°C (at the planning stage)
• Serial interface
: SPI mode 0, mode 3 supported
• Sector size
: 4K bytes/small sector, 64K bytes/sector
• Small sector erase, sector erase, chip erase functions
• Page program function (256 bytes / page)
• Block protect function
• Data retention period : 20 years
• Status functions
: Ready/busy information, protect information
• Highly reliable read/write
Number of rewrite times : 100,000 times
Small sector erase time : 40ms (typ.), 150ms (max.)
Sector erase time
: 80ms (typ.), 250ms (max.)
Chip erase time
: 300ms (typ.), 3.0s (max.)
Page program time : 6.0ms/256 bytes (typ.), 8.0ms/256 bytes (max.)
• Package
: LE25FS406TT MSOP8 (225mil): planning
: LE25FS406LF VSON8N(6.0 × 5.0)
: LE25FS406MA MFP8 (225mil)
: LE25FS406FQ VSON8(4.0 × 3.0)
* This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by
SANYO Semiconductor Co., Ltd.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
10511 SY/N2410 SY/73010 SY/70710 SY 20100630-S00001/31010 SY No.A1577-1/22
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
Table 2 Command Settings
4M Bit
sector(64KB)
7
6
5
4
3
2
1
0
LE25FS406
small sector
I27
to
I12
I11
to
96
95
to
80
79
to
64
63
to
48
47
to
32
31
to
16
15
to
2
1
0
address space(A23 to A0)
07F000h
07FFFFh
070000h
06F000h
070FFFh
06FFFFh
060000h
05F000h
060FFFh
05FFFFh
050000h
04F000h
050FFFh
04FFFFh
040000h
03F000h
040FFFh
03FFFFh
030000h
02F000h
030FFFh
02FFFFh
020000h
01F000h
020FFFh
01FFFFh
010000h
00F000h
010FFFh
00FFFFh
002000h
001000h
000000h
002FFFh
001FFFh
000FFFh
No.A1577-5/22
Datasheet pdf -
5 Page 
www.DataSheet.co.kr
LE25FS406
6. Small Sector Erase
Small sector erase is an operation that sets the memory cell data in any small sector to "1". A small sector consists of
4Kbytes. "Figure 12 Small Sector Erase" shows the timing waveforms, and Figure 21 shows a small sector erase
flowchart. The small sector erase command consists of the first through fourth bus cycles, and it is initiated by inputting
the 24-bit addresses following (20h) or (D7h). Addresses A18 to A12 are valid, and Addresses A23 to A19 are "don't
care". After the command has been input, the internal erase operation starts from the rising CS edge, and it ends
automatically by the control exercised by the internal timer. Erase end can also be detected using status register RDY.
Figure 12 Small Sector Erase
CS
Self-timed
Erase Cycle
tSSE
SCK
Mode3 0 1 2 3 4 5 6 7 8
Mode0
15 16 23 24 31
8CLK
SI D7h Add. Add. Add.
MSB
High Impedance
SO
7. Sector Erase
Sector erase is an operation that sets the memory cell data in any sector to "1". A sector consists of 64Kbytes. "Figure
13 Sector Erase" shows the timing waveforms, and Figure 21 shows a sector erase flowchart. The sector erase command
consists of the first through fourth bus cycles, and it is initiated by inputting the 24-bit addresses following (D8h).
Addresses A18 to A16 are valid, and Addresses A23 to A19 are "don't care". After the command has been input, the
internal erase operation starts from the rising CS edge, and it ends automatically by the control exercised by the internal
timer. Erase end can also be detected using status register RDY.
Figure 13 Sector Erase
CS
Self-timed
Erase Cycle
tSE
SCK
SI
SO
Mode3
Mode0
012345678
15 16 23 24 31
8CLK
MSB
D8h
Add. Add. Add.
High Impedance
No.A1577-11/22
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
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