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PDF MI3407 Data sheet ( Hoja de datos )
| Número de pieza | MI3407 | |
| Descripción | P-Channel 30V (D-S)MOSFET | |
| Fabricantes | MegaPower Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MI3407 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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P-Channel 30V (D-S)MOSFET
General Description
This miniature surface monut MOSFET uses
advanced trench process , low RDS(on) assures
minimal power loss and energy conversion ,
which makes this device ideal for use in power
managementcircuit.
Applications
Load switch
DC-DC converters
Power management
MI3407
Features
VDS (V) = -30V
ID(A) = -4A (VGS = -10V)
RDS(on) = 0.060 ohm @ VGS = -10V
RDS(on) = 0.090 ohm@ VGS = -4.5V
Low gate charge
Fast switching speed
DD
S
SOT-23
G
G
Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Noted)
S
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction)a
Power Dissipation a
Operating Junction and Storage Temperature Range
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ,Tstg
Maximum
-30
±20
-4
-3.2
-20
-2.2
1.4
1.0
-55 to 150
Thermal Resistance Ratings
Parameter
Symbol Maximum
Maximum Junction-to-Ambient a
t<= 5 sec
Steady-State
RθJA
90
130
Units
V
A
A
W
℃
Units
℃/W
Megapower Semiconductor Mar,2009
1
MI3407 Rev.2.1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
SOT -23 3-Lead
D
3
E1 E
12
e
e1
TOP VIEW
MI3407
SYMBOL
A
A1
b
c
D
E
E1
e
e1
L
L1
θ
MIN
0.70
0.00
0.30
0.08
2.80
2.60
1.40
0º
NOM
1.00
0.40
0.13
2.90
2.80
1.60
0.95 BSC
1.90 BSC
0.400 REF
0.540 REF
5º
MAX
1.15
0.13
0.50
0.20
3.10
3.00
1.80
8º
b
SIDE VIEW
A
A1
θ
L1 L
END VIEW
c
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC TO-236.
Megapower Semiconductor Mar,2009
5
Doc.SOT233-071012
MI3407 Rev.2.1
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MI3407.PDF ] | |
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