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Teilenummer | 2SD0814A |
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Beschreibung | Silicon NPN epitaxial planar type | |
Hersteller | Panasonic Semiconductor | |
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Gesamt 3 Seiten www.DataSheet4U.net
Transistors
2SD0814A (2SD814A)
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features
• High collector-emitter voltage (Base open) VCEO
• Low noise voltage NV
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
185
185
5
50
100
200
150
−55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
0.40+–00..0150
3
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol L
Unit: mm
0.16+–00..0160
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
185
V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V
Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0
1 µA
Forward current transfer ratio *
hFE VCE = 5 V, IC = 10 mA
90 330
Collector-emitter saturation voltage
VCE(sat) IC = 30 mA, IB = 3 mA
1V
Transition frequency
fT VCB = 10 V, IE = −10 mA, f = 200 MHz
150
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
2.3 pF
Noise voltage
NV VCE = 10 V, IC = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE
90 to 155
130 to 220 185 to 330
Publication date: January 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00196CED
1
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ 2SD0814A Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
2SD0814 | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) | Panasonic Semiconductor |
2SD0814A | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
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