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2SB1221 Schematic ( PDF Datasheet ) - Panasonic Semiconductor

Teilenummer 2SB1221
Beschreibung Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)
Hersteller Panasonic Semiconductor
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Gesamt 3 Seiten
2SB1221 Datasheet, Funktion
Transistor
2SB1221
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC3941
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–250
–200
–5
–100
–70
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICBO
VCEO
VEBO
hFE*
VCB = –12V, IE = 0
IC = –100µA, IB = 0
IE = –1µA, IC = 0
VCE = –10V, IC = –5mA
–200
–5
60
–2 µA
V
V
220
Collector to emitter saturation voltage VCE(sat)
IC = –50mA, IB = –5mA
–1.5 V
Transition frequency
Collector output capacitance
fT
Cob
VCB = –10V, IE = 10mA, f = 200MHz
50
80
MHz
VCB = –10V, IE = 0, f = 1MHz
5 10 pF
*hFE Rank classification
Rank
Q
hFE 60 ~ 150
R
100 ~ 220
1





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