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2SB1220 Schematic ( PDF Datasheet ) - Panasonic Semiconductor

Teilenummer 2SB1220
Beschreibung Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Hersteller Panasonic Semiconductor
Logo Panasonic Semiconductor Logo 




Gesamt 2 Seiten
2SB1220 Datasheet, Funktion
Transistor
2SB1220
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD1821
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
–150
–150
–5
–100
–50
150
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S-Mini Type Package
Marking symbol : I
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICBO
VCEO
VEBO
hFE*
VCB = –100V, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –10mA
–150
–5
130
–1 µA
V
V
450
Collector to emitter saturation voltage VCE(sat)
Transition frequency
fT
IC = –30mA, IB = –3mA
VCB = –10V, IE = 10mA, f = 200MHz
–1 V
200 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
4 pF
Noise voltage
NV VCE = –10V, IC = –1mA, GV= 80dB,
Rg = 100k, Function = FLAT
150
mV
*hFE Rank classification
Rank
hFE
Marking Symbol
R
130 ~ 220
IR
S
185 ~ 330
IS
T
260 ~ 450
IT
1





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