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PDF 2SB1050 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1050 | |
| Descripción | Silicon PNP epitaxial planer type(For low-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB1050
Silicon PNP epitaxial planer type
For low-frequency amplification
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large collector current IC.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC*
Tj
Tstg
–30
–20
–7
–8
–5
1
150
–55 ~ +150
V
V
V
A
A
W
˚C
˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
VCEO
VEBO
hFE*1
VCE(sat)
fT
Cob
Conditions
VCB = –10V, IE = 0
VEB = –5V, IC = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –2A*2
IC = –3A, IB = –0.1A*2
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
min
–20
–7
90
typ max Unit
–100 nA
–100 nA
V
V
625
–1 V
120 MHz
85 pF
*2 Pulse measurement
*1hFE Rank classification
Rank
P
Q
hFE 90 ~ 135 120 ~ 205
R
180 ~ 625
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1050.PDF ] | |
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