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PDF APT106N60B2C6 Data sheet ( Hoja de datos )
| Número de pieza | APT106N60B2C6 | |
| Descripción | Super Junction MOSFET | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APT106N60B2C6
600V 106A 0.035Ω
COOLMOS
Power Semiconductors
Super Junction MOSFET
• Ultra Low RDS(ON)
• Low Miller Capacitance
www.DataSheet4U.net
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
• Dual die (parallel)
• Popular T-MAX Package
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
D
G
S
MAXIMUM RATINGS
All Ratings per die: TC = 25°C unless otherwise specified.
Symbol Parameter
APT106N60B2C6
UNIT
VDSS
ID
IDM
VGS
PD
TJ,TSTG
TL
IAR
EAR
EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C 1
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 2
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 2
Repetitive Avalanche Energy 3 ( Id = 18.6A, Vdd = 50V )
Single Pulse Avalanche Energy ( Id = 18.6A, Vdd = 50V )
600
106
68
318
±20
833
-55 - to 150
260
18.6
3.4
2200
Volts
Amps
Volts
Watts
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA)
600
RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 53A)
0.035
IDSS
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
50
500
IGSS
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±200
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 3.4mA)
2.5 3 3.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
μA
nA
Volts
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
1 page  
Typical Performance Curves
10%
td(on)
tr
5% 10%
Switching Energy
Gate Voltage
TJ = 125°C
90% Collector Current
5%
Collector Voltage
Figure 17, Turn-on Switching Waveforms and Definitions
APT106N60B2C6
90%
td(off)
Collector Current
Gate Voltage
TJ = 125°C
tf Collector Voltage
10%
0
Switching Energy
Figure 18, Turn-off Switching Waveforms and Definitions
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D.U.T.
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T-MAX™ (B2) Package Outline
100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
5 Page | ||
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| PDF Descargar | [ Datasheet APT106N60B2C6.PDF ] | |
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