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PDF BCP1213 Data sheet ( Hoja de datos )
| Número de pieza | BCP1213 | |
| Descripción | Epitaxial Planar Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
BCP1213
PNP
Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
wwwT.hDeataBShCeePt41U2.n1et3 is designed for using in power amplifier applications
or power switching applications.
MARKING
Type Name
NY
hFE Ranking
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
IB
PC (Note 1)
Junction & Storage Temperature
TJ, TSTG
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain.
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CEO
ICBO
IEBO
hFE(1)
hFE(2)
VBE(sat)
VCE(sat)
fT
COB
Min.
Max.
-50 -
- -100
- -100
70 240
20 -
- -1.2
- -0.5
120 TYP.
40
Turn-on time
tON
0.1
SOT-89
A
E
C
BD
F
REF.
A
B
C
D
E
F
G
H
MillimetJer
Min. Max.
4.40
4.05
1.40
4.60
4.25
1.60
2.40 2.60
1.50 1.70
0.89 1.20
K
REF.
G
H
J
K
L
L Millimeter
Min. Max.
--
1.50 REF.
3.00 REF.
0.40 0.52
0.35 0.41
Ratings
Unit
-50 V
-50 V
-5 V
-2 A
-0.4 A
500 mW
1000
mW
150, -55~150
°C
Note 1: Mounted on ceramic substrate (250mm2x0.8t)
Unit
V
nA
nA
V
V
MHz
pF
μs
Test Conditions
IC = -10 mA, IB = 0
VCB = -50 V, IE = 0
VEB = -5 V, IC = 0
VCE = -2 V, IC = -0.5 A
VCE = -2 V, IC = -2.0 A
IC = -1 A, IB = -0.05 A
IC = -1 A, IB = -0.05 A
VCE = -2 V, IC = -0.5 A
VCB = -10 V, IE = 0, f = 1 MHz
Switching time
Storage time
tSTG
1.0
μs
Fall time
tF
0.1 μs
CLASSIFICATION OF hFE
Rank
hFE
O
70 – 140
Y
120 - 240
http://www.SeCoSGmbH.com/
01-June-2004 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
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| PDF Descargar | [ Datasheet BCP1213.PDF ] | |
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