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IDH02SG120 Schematic ( PDF Datasheet ) - Infineon Technologies

Teilenummer IDH02SG120
Beschreibung Schottky Diode
Hersteller Infineon Technologies
Logo Infineon Technologies Logo 




Gesamt 6 Seiten
IDH02SG120 Datasheet, Funktion
3rd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
www.DataSheet4U.net
IDH02SG120
Product Summary
V DC
QC
I F; T C< 130 °C
1620000 V
73.2 nC
23 A
PG-TO220-2
thinQ!TM 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
IDH02SG120
Package
PG-TO220-2
Marking
D02G120
Pin 1
C
Pin 2
A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
IF
Surge non-repetitive forward current, I F,SM
sine halfwave
T C<130 °C
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Non-repetitive peak forward current
i ²t value
I F,max
i 2dt
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Repetitive peak reverse voltage
V RRM T j=25 °C
Diode dv/dt ruggedness
dv/ dt VR= 0….960 V
Power dissipation
P tot T C=25 °C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
Mounting torque
T j, T stg
T sold
1.6mm (0.063 in.) from
case for 10s
M3 and M3.5 screws
Rev. 2.0
page 1
Value
2
15
13
90
1.4
1.1
1200
50
75
-55 ... 175
260
60
Unit
A
A2s
V
V/ns
W
°C
Ncm
2009-09-04






IDH02SG120 Datasheet, Funktion
IDH02SG120
We Listen to Your Comments
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Please send your proposal (including a reference to this document) to: [email protected]
Edition 2009-08-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein
and/or any information regarding the application of the device, Infineon Technologies hereby disclaims
any and all warranties and liabilities of any kind, including without limitation, warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the
nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system or to affect the safety or effectiveness
of that device or system. Life support devices or systems are intended to be implanted in the human
body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Rev. 2.0
page 6
2009-09-04

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