|
|
Teilenummer | IDD04S60C |
|
Beschreibung | Schottky Diode | |
Hersteller | Infineon Technologies | |
Logo | ||
Gesamt 7 Seiten IDD04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
www.DataSheet4U.net
• Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
600 V
8 nC
4A
PG-TO252
3
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
1
2
Type
IDD04S60C
Package
PG-TO252
Marking
D04S60C
Pin 1
n.c.
Pin 2
A
Pin 3
C
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous forward current
RMS forward current
Symbol Conditions
IF
I F,RMS
T C<130 °C
f =50 Hz
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C=25 °C, t p=10 ms
Value
4
5.6
32
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
I F,max T C=25 °C, t p=10 µs
∫i 2dt
T C=25 °C, t p=10 ms
V RRM
dv/ dt V R = 0….480V
P tot T C=25 °C
T j, T stg
18
132
5.1
600
50
37
-55 ... 175
Unit
A
A2s
V
V/ns
W
°C
Rev. 2.0
page 1
2006-04-03
Package Outline:PG-TO252-3-1/TO252-3-11/TO252-3-21
IDD04S60C
Dimensions in mm/inches:
Rev. 2.0
page 6
2006-04-03
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ IDD04S60C Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
IDD04S60C | Schottky Diode | Infineon Technologies |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |