(PDF) IDC06S60CE Datasheet

Número de pieza	IDC06S60CE
Descripción	Schottky Diode
Fabricantes	Infineon Technologies
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No Preview Available ! 2nd generation thinQ!TM SiC Schottky Diode IDC06S60CE Features: Applications: • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery w• ww.HDaigtahShseeut4rUg.enetcurrent capability • SMPS, PFC, snubber A C Chip Type IDC06S60CE VBR 600V IF 6A Die Size 1.45 x 1.354 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.45x 1.354 1.213 x 1.117 mm2 1.96 355 µm 100 mm 3449 Photoimide 3200 nm Al Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009 1 page

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PDF IDC06S60CE Data sheet ( Hoja de datos )