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IDB30E120 Schematic ( PDF Datasheet ) - Infineon Technologies

Teilenummer IDB30E120
Beschreibung Fast Switching Emitter Controlled Diode
Hersteller Infineon Technologies
Logo Infineon Technologies Logo 




Gesamt 8 Seiten
IDB30E120 Datasheet, Funktion
Fast Switching Emitter Controlled Diode
Feature
1200 V Emitter Controlled technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
Easy paralleling
* RoHS compliant
IDB30E120
Product Summary
VRRM
1200
IF
VF
Tjmax
30
1.65
150
V
A
V
°C
PG-TO263-3-2
2
1
3
Type
IDB30E120
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
PG-TO263-3-2
-
D30E120 NC
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continous forward current
TC=25°C
TC=90°C
VRRM
IF
Surge non repetitive forward current
IFSM
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
IFRM
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25°C
TC=90°C
Ptot
Operating and storage temperature
Soldering temperature
reflow soldering, MSL1
Tj , Tstg
TS
Value
1200
50
30
102
76.5
138
66
-55...+150
260
Unit
V
A
W
°C
°C
Rev.2.3
Page 1
2013-07-02






IDB30E120 Datasheet, Funktion
9 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 IDP30E120
K/W
10 0
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
IDB30E120
Rev.2.3
Page 6
2013-07-02

6 Page







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