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Teilenummer | LS124 |
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Beschreibung | General Purpose | |
Hersteller | Micross | |
Logo | ||
Gesamt 1 Seiten LS124
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems replaces discontinued Intersil IT124
The LS124 is a monolithic pair of Super-Beta NPN
transistors mounted in a single P-DIP package. The
monolithic dual chip design reduces parasitics and
gives better performance while ensuring extremely tight
matching. The LS124 is a direct replacement for
discontinued Intersil IT124.
FEATURES
Direct Replacement for INTERSIL LS124
HIGH GAIN
LOW OUTPUT CAPACITANCE
VBE tracking
ABSOLUTE MAXIMUM RATINGS 1
hFE ≥ 1500 @ 1 AND 10µA
≤ 2.0pF
≤ 5.0µV°C
The 8 Pin P-DIP provides ease of manufacturing, and
@ 25°C (unless otherwise noted)
the symmetrical pinout prevents improper orientation.
Maximum Temperatures
(See Packaging Information).
Storage Temperature
Operating Junction Temperature
‐65°C to +200°C
‐55°C to +150°C
LS124 Features:
Maximum Power Dissipation
Continuous Power Dissipation (One side)
250mW
Very high gain
Tight matching
Low Output Capacitance
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
500mW
2.3mW/°C
4.3mW/°C
Maximum Currents
Collector Current
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 – VBE2 |
Base Emitter Voltage Differential
‐‐ 2 5 mV
IC = 10µA, VCE = 1V
∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential
Change with Temperature
‐‐ 5
15 µV/°C
IC = 10µA, VCE = 1V
TA = ‐55°C to +125°C
|IB1 – IB2 |
Base Current Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
Click To BuyBVCBO
Collector to Base Voltage
2
‐‐ ‐‐ 0.6
TYP.
‐‐
MAX.
‐‐
UNITS
V
nA IC = 10µA, VCE = 1V
CONDITIONS
IC = 10µA, IE = 0
BVCEO
Collector to Emitter Voltage
2 ‐‐ ‐‐ V
BVEBO Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V
BVCCO
Collector to Collector Voltage
100 ‐‐
‐‐
V
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
hFE
DC Current Gain
1500
‐‐
‐‐
IC = 1µA, VCE = 1V
1500
‐‐
‐‐
IC = 10µA, VCE = 1V
VCE(SAT)
Collector Saturation Voltage
‐‐ ‐‐ 0.5 V
IC = 1mA, IB = 0.1mA
IEBO
Emitter Cutoff Current
‐‐ ‐‐ 100 pA
IC = 0, VEB = 3V
ICBO
Collector Cutoff Current
‐‐ ‐‐ 100 pA
IE = 0, VCB = 1V
COBO
Output Capacitance
‐‐ ‐‐ 2 pF
IE = 0, VCB = 1V
CC1C2
IC1C2
Collector to Collector Capacitance
Collector to Collector Leakage Current
‐‐
‐‐
‐‐ 2 pF
‐‐ 10 nA
VCC = 0V
VCC = ±50V
fT
Current Gain Bandwidth Product 100 ‐‐
‐‐ MHz
IC = 100µA, VCE = 1V
NF
Narrow Band Noise Figure
‐‐ ‐‐ 3 dB IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
Available Packages:
LS124 in P-DIP
LS124 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
P-DIP (Top View)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ LS124 Schematic.PDF ] |
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