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LS124 Schematic ( PDF Datasheet ) - Micross

Teilenummer LS124
Beschreibung General Purpose
Hersteller Micross
Logo Micross Logo 




Gesamt 1 Seiten
LS124 Datasheet, Funktion
LS124
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems replaces discontinued Intersil IT124
The LS124 is a monolithic pair of Super-Beta NPN
transistors mounted in a single P-DIP package. The
monolithic dual chip design reduces parasitics and
gives better performance while ensuring extremely tight
matching. The LS124 is a direct replacement for
discontinued Intersil IT124.
FEATURES 
Direct Replacement for INTERSIL LS124 
HIGH  GAIN  
LOW OUTPUT CAPACITANCE 
VBE tracking
ABSOLUTE MAXIMUM RATINGS 1 
hFE ≥ 1500 @ 1 AND 10µA 
≤ 2.0pF 
≤ 5.0µV°C 
The 8 Pin P-DIP provides ease of manufacturing, and
@ 25°C (unless otherwise noted) 
the symmetrical pinout prevents improper orientation.
Maximum Temperatures 
(See Packaging Information).
Storage Temperature 
Operating Junction Temperature 
65°C to +200°C 
55°C to +150°C 
LS124 Features:
Maximum Power Dissipation 
Continuous Power Dissipation (One side) 
250mW 
ƒ Very high gain
ƒ Tight matching
ƒ Low Output Capacitance
Continuous Power Dissipation (Both sides) 
Linear Derating factor (One side) 
Linear Derating factor (Both sides) 
500mW 
2.3mW/°C 
4.3mW/°C 
Maximum Currents 
Collector Current 
10mA 
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN  TYP  MAX  UNITS  CONDITIONS 
|VBE1  VBE2 | 
Base Emitter Voltage Differential 
‐‐  2  5  mV 
IC = 10µA, VCE = 1V 
|(VBE1  VBE2)| / ∆T  Base Emitter Voltage Differential 
  Change with Temperature 
‐‐  5 
15  µV/°C 
IC = 10µA, VCE = 1V 
TA = ‐55°C to +125°C 
|IB1  IB2 | 
Base Current Differential 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
Click To BuyBVCBO 
Collector to Base Voltage 
2 
‐‐  ‐‐  0.6 
TYP. 
‐‐ 
MAX. 
‐‐ 
UNITS 
V 
nA  IC = 10µA, VCE = 1V 
CONDITIONS 
IC = 10µA, IE = 0 
BVCEO 
Collector to Emitter Voltage 
2  ‐‐  ‐‐  V 
BVEBO  EmitterBase Breakdown Voltage  6.2  ‐‐  ‐‐  V 
BVCCO 
Collector to Collector Voltage 
100  ‐‐ 
‐‐ 
V 
IC = 10µA, IB = 0 
IE = 10µA, IC = 02 
IC = 10µA, IE = 0 
hFE 
DC Current Gain 
1500 
‐‐ 
‐‐ 
 
IC = 1µA, VCE = 1V 
1500 
‐‐ 
‐‐ 
 
IC = 10µA, VCE = 1V 
VCE(SAT) 
Collector Saturation Voltage 
‐‐  ‐‐  0.5  V 
IC = 1mA, IB = 0.1mA 
IEBO 
Emitter Cutoff Current 
‐‐  ‐‐  100  pA 
IC = 0, VEB = 3V 
ICBO 
Collector Cutoff Current 
‐‐  ‐‐  100  pA 
IE = 0, VCB = 1V 
COBO 
Output Capacitance 
‐‐  ‐‐  2  pF 
IE = 0, VCB = 1V 
CC1C2 
IC1C2 
Collector to Collector Capacitance 
Collector to Collector Leakage Current 
‐‐ 
‐‐ 
‐‐  2  pF 
‐‐  10  nA 
VCC = 0V 
VCC = ±50V 
fT 
Current Gain Bandwidth Product  100  ‐‐ 
‐‐  MHz 
IC = 100µA, VCE = 1V 
NF 
Narrow Band Noise Figure 
‐‐  ‐‐  3  dB  IC = 10µA,  VCE = 3V, BW=200Hz, RG= 10KΩ,  
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse basetoemitter voltage must never exceed 6.2 volts; the reverse basetoemitter current must never exceed 10µA. 
 
Available Packages:
LS124 in P-DIP
LS124 available as bare die
Please contact Micross for full package and die dimensions:
Web: www.micross.com/distribution.aspx
P-DIP (Top View)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.





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