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PDF MUN2113RT1 Data sheet ( Hoja de datos )
| Número de pieza | MUN2113RT1 | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC–59 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
PIN2
base
(Input)
R1
R2
PIN3
Collector
(Output)
PIN2
Emitter
(Ground)
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1
MUN2116RT1
MUN2130RT1
MUN2131RT1
MUN2132RT1
MUN2133RT1
MUN2134RT1
PNP SILICON
BIAS RESISTOR
TRANSISTOR
3
2
1
CASE 318–03 , STYLE 1
( SC – 59 )
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T A = 25°C (1)
Derate above 25°C
VCBO
V CEO
IC
PD
50 Vdc
50 Vdc
100 mAdc
200 mW
1.6 mW/°C
THERMALCHARACTERISTICS
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Rating
Symbol
Value
Unit
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
R θ JA
T J , T stg
TL
625
–65 to +150
260
10
°C/W
°C
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
MUN2111RT1
MUN2112RT1
MUN2113RT1
MUN2114RT1
MUN2115RT1(2)
MUN2116RT1(2)
MUN2130RT1 (2)
MUN2131RT1 (2)
MUN2132RT1 (2)
MUN2133RT1 (2)
MUN2134R T1 (2)
Marking
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
R2 (K)
10
22
47
47
1.0
2.2
4.7
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
P1–1/7
1 page  
10
I C /I B =10
1
0.1
LESHAN RADIO COMPANY, LTD.
MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2112RT1
T A = –25°C
25°C
75°C
1000
100
V CE = 10 V
T A =75°C
25°C
–25°C
0.01
0
4
3
2
20 40 60
I C, COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
80
f = 1 MHz
l E= 0 V
T A = 25°C
1
0
0
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10 20 30 40
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
50
10
1
10 100
I C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
75°C 25°C
T A = –25°C
10
1
0.1
0.01
0.001
0
1 2 3 45
V O= 5 V
6 7 8 9 10
V in , INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input Voltage
100
V O = 0.2 V
T A = –25°C
10 25°C
75°C
1
0.1
0 10 20 30 40 50
I C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
P1–5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MUN2113RT1.PDF ] | |
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