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Número de pieza | IXFZ140N25T | |
Descripción | GigaMOS HiperFET Power MOSFET | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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No Preview Available ! Advance Technical Information
GigaMOSTM HiperFETTM
Power MOSFET
(Electrically Isolated Tab)
IXFZ140N25T
VDSS =
ID25 =
RDS(on) ≤
trr ≤
250V
100A
17mΩ
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
DE475
D
D
D
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
ID25 TC = 25°C
IDM TC = 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
PD TC = 25°C
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TJ
TJM
Tstg
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
t = 1 minute
t = 1 second
TL 1.6mm (0.062 in.) from Case for 10s
T Plastic Body for 10sSOLD www.DataSheet4U.net
FC Mounting Force
Weight
Maximum Ratings
250
250
V
V
±20 V
±30 V
100 A
400 A
40 A
3J
445 W
20 V/ns
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
300 °C
260 °C
20..120 / 4.5..27
N/lb.
3g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min.
Typ. Max.
250 V
2.5 5.0 V
±200 nA
50 μA
3 mA
17 mΩ
© 2010 IXYS CORPORATION, All Rights Reserved
G
S
S
Isolated Tab
G = Gate
D = Drain
S = Source
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Substrate
- Excellent Thermal Transfer
- Increased Temperature and Power
Cycling Capability
- High Isolation Voltage (2500V~)
z Very High Current Handling
Capability
z Fast Intrinsic Diode
z Avalanche Rated
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
DS100267(05/10)
1 page 1
0.1
0.01
0.001
0.00001
Fig. 13. Maximum Transient Thermal Impedance
IXFZ140N25T
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
DE475 (IXFZ) Outline
G
S
www.DataSheet4U.net
S
D
D
D
DG
DS
DS
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXFZ140N25T (9W)5-25-10-A
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXFZ140N25T.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXFZ140N25T | GigaMOS HiperFET Power MOSFET | IXYS Corporation |
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