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PDF IRF10N40 Data sheet ( Hoja de datos )
| Número de pieza | IRF10N40 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Suntac Electronic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF10N40 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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IRF10N40
! POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220
Top View
SYMBOL
D
G
12 3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed
Gate-to-Source Voltage Ё Continue
Ё Non-repetitive
Total Power Dissipation
Derate above 25к
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
ww(wV.DDDa=ta1S0h0eVet,4VUG.Sco=m10V, IL = 10A, L = 6mH, RG = 25ȍ)
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
Symbol
ID
IDM
VGS
VGSM
PD
TJ, TSTG
EAS
șJC
șJA
TL
Value
10
40
±20
±40
125
1.0
-55 to 150
300
1.7
62.5
260
Unit
A
V
V
W
W/к
к
mJ
к/W
к
Page 1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet IRF10N40.PDF ] | |
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