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PDF LMUN5315DW1T1 Data sheet ( Hoja de datos )
| Número de pieza | LMUN5315DW1T1 | |
| Descripción | Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
LMUN5311DW1T1
Series
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-
sistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1
and Q 2 , – minus sign for Q 1 (PNP) omitted)
Rating
Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
V CBO
V CEO
IC
50 Vdc
50 Vdc
100 mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.) mW/°C
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
R θJA
670 (Note 1.)
490 (Note 2.)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
Thermal Resistance –
www.DataSheet4JUu.cnocmtion-to-Ambient
Thermal Resistance –
Junction-to-Lead
R θJA
R θJL
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature
T J , T stg
–55 to +150
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
mW
mW/°C
°C/W
°C/W
°C
6
5
4
1
2
3
SOT-363/SC-88
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
XX
1 23
xx = Device Marking
= (See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
LMUN5311DW–1/29
1 page  
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5311DW1T1 NPN TRANSISTOR
1
IC/IB = 10
0.1
0.01
TA = −25°C
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.001
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
4 100 25°C
f = 1 MHz
75°C
3
IE = 0 V
TA = 25°C
10
TA = −25°C
1
2
0.1
1
0.01
VO = 5 V
0 0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
www.DataSheet4U.com
10
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
LMUN5311DW-5/29
5 Page 
LESHAN RADIO COMPANY, LTD.
LMUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − LMUN5314DW1T1 NPN TRANSISTOR
1
IC/IB = 10
0.1
0.01
TA = −25°C
25°C
75°C
300
VCE = 10
250
200
150
100
TA = 75°C
25°C
−25°C
0.001 0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 32. VCE(sat) versus IC
50
80 01 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 33. DC Current Gain
4
3.5 f = 1 MHz
lE = 0 V
3 TA = 25°C
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 34. Output Capacitance
100
TA = 75°C
10
25°C
−25°C
VO = 5 V
1
0 2 4 6 8 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 35. Output Current versus Input Voltage
www.DataSheet4U.com
10
VO = 0.2 V
1
TA = −25°C
25°C
75°C
0.1 0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
LMUN5311DW-11/29
11 Page | ||
| Páginas | Total 29 Páginas | |
| PDF Descargar | [ Datasheet LMUN5315DW1T1.PDF ] | |
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