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PDF LMUN5236T1G Data sheet ( Hoja de datos )
| Número de pieza | LMUN5236T1G | |
| Descripción | Bias Resistor Transistor NPN Silicon Surface Mount Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network con-
sisting of two resistors; a series base resistor and a base–emitter resistor.
The BRT eliminates these individual components by integrating them into a
single device. The use of a BRT can reduce both system cost and board
space. The device is housed in the SC–70/SOT–323 package which is
designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–70/SOT–323 package can be soldered using wave or
reflow. The modified gull–winged leads absorb thermal stress
during soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
• Pb-Free package is available
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2
of this data sheet.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Collector Current
IC 100
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD 202 (Note 1.)
310 (Note 2.)
1.6 (Note 1.)
2.5 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
RθJA 618 (Note 1.)
403 (Note 2.)
Thermal Resistance –
www.DataSheet4U.coJmunction-to-Lead
RθJL 280 (Note 1.)
332 (Note 2.)
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
TJ, Tstg
–55 to +150
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C/W
°C
LMUN5211T1
SERIES
3
1
2
SC-70 / SOT-323
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKINGDIAGRAM
8X M
8x = Specific Device Code
x = (See Marking Table)
M= Date Code
LMUN5211T1 Series–1/10
1 page  
1
IC/IB = 10
0.1
0.01
LESHAN RADIO COMPANY, LTD.
LMUN5211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5211T1
TAĂ=Ă-25°C
25°C
1000
75°C
100
VCE = 10 V
TAĂ=Ă75°C
25°C
-25°C
0.001 0
4
3
2
1
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
50 10 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100
75°C
10
25°C
TAĂ=Ă-25°C
1
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
0.01
VO = 5 V
50 0.001 0 1 2 3 4 5 6 7 8 9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
www.DataSheet4U.com
10
VO = 0.2 V
1
TAĂ=Ă-25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
LMUN5211T1 Series–5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet LMUN5236T1G.PDF ] | |
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