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PDF LMUN5116DW1T1 Data sheet ( Hoja de datos )
| Número de pieza | LMUN5116DW1T1 | |
| Descripción | Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
LMUN5111DW1T1
Series
6
5
4
1
2
3
SC-88/SOT-363
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
V CBO –50 Vdc
Collector-Emitter Voltage
V CEO –50 Vdc
Collector Current
THERMAL CHARACTERISTICS
I C –100 mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.) mW/°C
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
R θJA
670 (Note 1.)
490 (Note 2.)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D 250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
Thermal Resistance –
www.DataSheet4JUu.cnocmtion-to-Ambient
Thermal Resistance –
Junction-to-Lead
R θJA
R θJL
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature
T J , T stg
–55 to +150
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
mW
mW/°C
°C/W
°C/W
°C
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
XX
1 23
xx = Device Marking
= (See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
LMUN5111DW–1/12
1 page  
LESHAN RADIO COMPANY, LTD.
LMUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5111DW1T1
1 1000
0.1 100
0.01
0
4
20 40
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
10
50 1
100
10
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
10
3
1
2
0.1
1
0.01
0
0 10 20 30 40
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
50
0.001
0
12
34
56
78
9 10
V in , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
10
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1
0.1
0
10 20 30 40 50
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
LMUN5111DW–5/12
5 Page 
LESHAN RADIO COMPANY, LTD.
LMUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5137DW1T1
1 1000
0.1 100
0.01
0
5 10 15 20 25 30 35 40 45 50
I C , COLLECTOR CURRENT (mA)
Figure 29. Maximum Collector Voltage versus
Collector Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10 20
30 40 50
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 31. Output Capacitance
60
10
1
100
10
I C , COLLECTOR CURRENT (mA)
Figure 30. DC Current Gain
100
10
1
0.1
0.01
0.001
0
1 2 3 4 5 6 7 8 9 10 11
V in , INPUT VOLTAGE (VOLTS)
Figure 32. Output Current versus Input oltage
100
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10
1
05
10 15 20 25
I C , COLLECTOR CURRENT (mA)
Figure 33. Input Voltage versus Output Current
LMUN5111DW–11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet LMUN5116DW1T1.PDF ] | |
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