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PDF APTC60TDUM24TPG Data sheet ( Hoja de datos )
| Número de pieza | APTC60TDUM24TPG | |
| Descripción | Triple dual Common Source Super Junction MOSFET Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTC60TDUM24TPG (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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APTC60TDUM24TPG
Triple dual Common Source
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 24mΩ max @ Tj = 25°C
ID = 95A @ Tc = 25°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
•
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
• High level of integration
D1
S1/S2
G1
S1
S2
G2
D2
D3
S3/S4
G3
S3
S4
G4
D4
D5
S5/ S6
G5
S5
S6
G6
D6
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
www.DataPSDheet4UM.caoxmimum Power Dissipation
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
600
95
70
260
±20
24
462
15
3
1900
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
1 page  
Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.1
1.0
0.9
0.8
0.7
0.6
25
50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
1000000
100000
10000
Coss
Ciss
1000
100
Crss
10
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
www.DataSheet4U.com
APTC60TDUM24TPG
ON resistance vs Temperature
3.0
2.5
VGS=10V
ID= 95A
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limited by RDSon
100 µs
10 Single pulse
TJ=150°C
TC=25°C
1 ms
10 ms
1
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
ID=95A
10 TJ=25°C
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
www.microsemi.com
5–6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTC60TDUM24TPG.PDF ] | |
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