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PDF APTC60HM70T1G Data sheet ( Hoja de datos )
| Número de pieza | APTC60HM70T1G | |
| Descripción | Full - Bridge Super Junction MOSFET Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APTC60HM70T1G
Full - Bridge
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 70mΩ max @ Tj = 25°C
ID = 39A @ Tc = 25°C
3
Q1
4
Q3
52
61
Q2 Q4
79
8 10
11 NTC
12
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
•
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Pins 3/4 must be shorted together
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
PD Maximum Power Dissipation
IAR Avalanche current (repetitive and non repetitive)
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Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
600
39
29
160
±20
70
250
20
1
1800
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
1 page  
Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
25
50 75 100 125
TJ, Junction Temperature (°C)
150
Threshold Voltage vs Temperature
1.1
1.0
0.9
0.8
0.7
0.6
25
50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
Ciss
Coss
100 Crss
10
0
10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTC60HM70T1G
ON resistance vs Temperature
3.0
2.5
VGS=10V
ID= 39A
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limited by RDSon
100 µs
10
1
1
Single pulse
TJ=150°C
TC=25°C
1 ms
10 ms
10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
12
ID=39A
TJ=25°C
VDS=120V
10 VDS=300V
8 VDS=480V
6
4
2
0
0 50 100 150 200 250 300
Gate Charge (nC)
www.DataSheet4U.com
www.microsemi.com
5–6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTC60HM70T1G.PDF ] | |
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