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PDF APTC60HM45SCTG Data sheet ( Hoja de datos )
| Número de pieza | APTC60HM45SCTG | |
| Descripción | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTC60HM45SCTG (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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APTC60HM45SCTG
Full - Bridge
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
CR1A
VBUS
CR3A
VDSS = 600V
RDSon = 45mΩ max @ Tj = 25°C
ID = 49A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Q1 CR1B CR3B
Q3
Features
•
G1
S1
G2
S2
NTC1
CR2A
OUT1 OUT2
CR4A
Q2 CR2B CR4B
Q4
0/VBUS
G3
S3
G4
S4
NTC2
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
G3
S3
VBUS
G4
S4
0/VBUS
OUT2
OUT1
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
S1 S2 NTC2
G1 G2 NTC1
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
Absolute maximum ratings
• RoHS compliant
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Tc = 25°C
Tc = 80°C
600 V
49
38 A
130
±20 V
45 mΩ
www.DataPSDheet4UM.caoxmimum Power Dissipation
Tc = 25°C
250
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
15
3
1900
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–8
1 page  
APTC60HM45SCTG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5 0.9
0.4 0.7
0.3 0.5
0.2 0.3
0.1 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Low Voltage Output Characteristics
360
320 VGS=15&10V
280
240
6.5V
6V
200 5.5V
160
120
80
40
0
0
5V
4.5V
4V
5 10 15 20 25
VDS, Drain to Source Voltage (V)
1.3
1.25
1.2
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 50A
VGS=10V
1.15
1.1
1.05
VGS=20V
1
0.95
0.9
0 20 40 60 80 100 120 140
ID, Drain Current (A)
www.DataSheet4U.com
Transfert Characteristics
140
120
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
80
60
40 TJ=125°C
20
TJ=25°C
TJ=-55°C
0
0123456
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
50
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150
TC, Case Temperature (°C)
www.microsemi.com
5–8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet APTC60HM45SCTG.PDF ] | |
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