|
|
PDF APTC60DHM24T3G Data sheet ( Hoja de datos )
| Número de pieza | APTC60DHM24T3G | |
| Descripción | Asymmetrical Bridge Super Junction MOSFET Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APTC60DHM24T3G (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
APTC60DHM24T3G
Asymmetrical Bridge
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 24mΩ max @ Tj = 25°C
ID = 95A @ Tc = 25°C
13 14
Q1
18
CR3
22 7
19
23 8
CR2
Q4
4
29
15
30
31
R1
32
16
3
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23…
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
•
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM Pulsed Drain current
VGS Gate - Source Voltage
RDSon Drain - Source ON Resistance
www.DataPSDheet4UM.caoxmimum Power Dissipation
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
600
95
70
260
±20
24
462
15
3
1900
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-7
1 page  
Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.1
1.0
0.9
0.8
0.7
0.6
25
50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
1000000
100000
10000
Coss
Ciss
1000
100
Crss
10
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
www.DataSheet4U.com
APTC60DHM24T3G
ON resistance vs Temperature
3.0
2.5
VGS=10V
ID= 95A
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limited by RDSon
100 µs
10 Single pulse
TJ=150°C
TC=25°C
1 ms
10 ms
1
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
ID=95A
10 TJ=25°C
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
www.microsemi.com
5-7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APTC60DHM24T3G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APTC60DHM24T3G | Asymmetrical Bridge Super Junction MOSFET Power Module | Microsemi |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |