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PDF DE2S068 Data sheet ( Hoja de datos )
| Número de pieza | DE2S068 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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This product complies with the RoHS Directive (EU 2002/95/EC).
DE2S068
Silicon epitaxial planar type
For ESD protection
Features
High electrostatic discharge ESD
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Total power dissipation *1
PT
Electrostatic discharge *2
ESD
Rating
150
±30
Unit
mW
kV
Junction temperature
Tj 150 °C
Storage temperature
Tstg –55 to +150 °C
Note) *1: PT = 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
Package
Code
SSMini2-F5-B
Pin Name
1. Cathode
2. Anode
Marking Symbol: E2
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Zener voltage *1, 2
VZ IR = 1 mA
6.46 7.14 V
Reverse current
IR VR = 4 V
0.5 mA
Terminal capacitance
Ct VR = 0 V, f = 1 MHz
50 pF
Temperature coefficient of zener voltage *3
SZ IZ = 1 mA
3.0 mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
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Publication date: October 2010
Ver. BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DE2S068.PDF ] | |
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