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EIA1414-8P Schematic ( PDF Datasheet ) - Excelics Semiconductor

Teilenummer EIA1414-8P
Beschreibung 14.0-14.5GHz 8W Internally Matched Power FET
Hersteller Excelics Semiconductor
Logo Excelics Semiconductor Logo 




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EIA1414-8P Datasheet, Funktion
Excelics
EIA1414-8P
Not recommended for new designs. Contact factory. Effective 03/2003
14.0-14.5GHz, 8W Internally Matched Power FET
14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
HIGH PAE(25% TYPICAL)
+39dBm TYPICAL P1dB OUTPUT POWER
7.0dB TYPICAL G1dB POWER GAIN
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression f=14.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
Vds=8V, Idsq=0.5 Idss
f=14.0-14.5GHz
Power Added Efficiency at 1dB compression
f=14.0-14.5GHz Vds=8V, Idsq=0.5 Idss
Id1dB
IP3
Drain Current at 1dB Compression
Output 3rd Order Intercept Point f=14.0-14.5GHz
Vds=8V, Idsq=0.5 Idss
Idss Saturated Drain Current Vds=3V, Vgs=0V
EIA1414-8P
MIN TYP MAX
38 39
6.0 7.0
25
3520
46
4400 5760 6800
Gm Transconductance Vds=3V, Vgs=0V
6000
Vp Pinch-off Voltage Vds=3V, Ids=48mA
-1.0 -2.5
BVgd Drain Breakdown Voltage Igd=19.2mA
-13 -15
Rth Thermal Resistance (Au-Sn Eutectic Attach)
2.3
UNIT
dBm
dB
%
mA
dBm
mA
mS
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
12V
Vgs Gate-Source Voltage
-8V
Ids Drain Current
Idss
Igsf Forward Gate Current
720mA
Pin
www.DataSheet4U.com
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
38dBm
175oC
-65/175oC
Pt Total Power Dissipation
60W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-3V
6240mA
120mA
@ 3dB Compression
150oC
-65/150oC
50W
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com





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