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PDF BSD316SN Data sheet ( Hoja de datos )
| Número de pieza | BSD316SN | |
| Descripción | 2 Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSD316SN (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS™2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
BSD316SN
Product Summary
V DS
R DS(on),max
ID
V GS=10 V
V GS=4.5 V
30 V
160 mΩ
280
1.4 A
PG-SOT363
6 54
Type
Package Tape and Reel Information
BSD316SN PG-SOT363 L6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Marking
X7s
Avalanche energy, single pulse
E AS I D=1.4 A, R GS=25 Ω
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
dv /dt
I D=1.4 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
V GS
P tot T A=25 °C
T j, T stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
12 3
Lead Free
Yes
Packing
Non dry
Value
1.4
1.1
5.6
3.7
6
±20
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 2.1
www.DataSheet.in
page 1
2009-02-11
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
4
4.5 V
3
10 V
4V
2
3.5 V
1
3V
2.8 V
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
400
BSD316SN
350
300 3.5 V
250
200
150
100
4V
4.5 V
5V
7V
10 V
50
0
3 012
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
3
4
46
3
4
2
1 150 °C
2
25 °C
0
012345
V GS [V]
0
0
Rev 2.1
page 5
www.DataSheet.in
246
I D [A]
8
2009-02-11
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSD316SN.PDF ] | |
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