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PDF STB8NA50 Data sheet ( Hoja de datos )
| Número de pieza | STB8NA50 | |
| Descripción | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB8NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STB8NA50
V DSS
500 V
RDS(on )
< 0.85 Ω
ID
8A
n TYPICAL RDS(on) = 0.7 Ω
n ± 30V GATE TO SOURCE VOLTAGE RATING
n 100% AVALANCHE TESTED
n REPETITIVE AVALANCHE DATA AT 100oC
n LOW INTRINSIC CAPACITANCES
n GATE CHARGE MINIMIZED
n REDUCED THRESHOLD VOLTAGE SPREAD
n THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
n SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
n HIGH CURRENT, HIGH SPEED SWITCHING
n SWITCH MODE POWER SUPPLIES (SMPS)
n DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
123
I2PAK
TO-262
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
IDM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Fact or
Tstg Storage Temperature
Tj Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
October 1995
www.DataSheet.in
V alu e
500
500
± 30
8
5.3
32
125
1
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/10
1 page  
Capacitance Variations
STB8NA50
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STB8NA50.PDF ] | |
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