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PDF FDD3510H Data sheet ( Hoja de datos )
| Número de pieza | FDD3510H | |
| Descripción | Dual N & P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDD3510H
April 2008
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ
Features
General Description
Q1: N-Channel
Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A
Q2: P-Channel
Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
100% UIL Tested
RoHS Compliant
These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench® process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Applications
Inverter
H-Bridge
D1/D2
D1 D2
G2
S2
G1
S1
Dual DPAK 4L
G1 G2
S1
N-Channel
S2
P-Channel
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Continuous
- Pulsed
Power Dissipation for Single Operation
EAS
TJ, TSTG
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Characteristics
TC = 25°C
TA = 25°C
TC = 25°C (Note 1)
TA = 25°C (Note 1a)
TA = 25°C (Note 1b)
(Note 3)
Q1 Q2
80 -80
±20 ±20
13.9 -9.4
4.3 -2.8
20 -10
35 32
3.1
1.3
37 54
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
Package Marking and Ordering Information
(Note 1)
(Note 1)
3.5
3.9
°C/W
Device Marking
FDD3510H
Device
FDD3510H
Package
TO-252-4L
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD3510H Rev.C
1
www.fairchildsemi.com
www.DataSheet.in
1 page  
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
ID = 4.3A
8
VDD = 40V
6
VDD = 30V
4
VDD = 50V
1000
100
Ciss
Coss
2
0
0 2 4 6 8 10 12 14
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
5
4
3
TJ = 25oC
2
TJ = 125oC
1
0.01
0.1 1
tAV, TIME IN AVALANCHE(ms)
Figure9. UnclampedInductive
Switching Capability
50
10
10
100us
THIS AREA IS
1 LIMITED BY rDS(on)
0.1
0.05
0.5
1
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.5oC/W
TC = 25oC
10
1ms
10ms
100ms
DC
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
f = 1MHz
VGS = 0V
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure8. CapacitancevsDrain
to Source Voltage
15
12
VGS = 10V
9
VGS = 6V
6
3
RθJC = 3.5oC/W
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
150
105
VGS = 10V
104
103 SINGLE PULSE
RθJC = 3.5oC/W
TC = 25oC
102
10
10-6
10-5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
Figure 12. Single Pulse Maximum
Power Dissipation
1
FDD3510H Rev.C
www.DataSheet.in
5 www.fairchildsemi.com
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