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PDF APTC60SKM24CT1G Data sheet ( Hoja de datos )

Número de pieza APTC60SKM24CT1G
Descripción Buck chopper Super Junction MOSFET SiC chopper diode
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



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No Preview Available ! APTC60SKM24CT1G Hoja de datos, Descripción, Manual

APTC60SKM24CT1G
Buck chopper
Super Junction MOSFET
SiC chopper diode
56
11
VDSS = 600V
RDSon = 24mΩ max @ Tj = 25°C
ID = 95A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Q1
7
8
CR2
3 NTC
4
12
12
Features
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
CR2 SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
600
95
70
260
±20
24
462
15
3
1900
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTC60SKM24CT1G pdf
Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.1
1.0
0.9
0.8
0.7
0.6
25
50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
1000000
100000
10000
Coss
Ciss
1000
100
Crss
10
0 10 20 30 40 50
VDS, Drain to Source Voltage (V)
APTC60SKM24CT1G
ON resistance vs Temperature
3.0
2.5
VGS=10V
ID= 95A
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limited by RDSon
100 µs
10 Single pulse
TJ=150°C
TC=25°C
1 ms
10 ms
1
1 10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
ID=95A
10 TJ=25°C
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
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