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PDF LPD200P70 Data sheet ( Hoja de datos )
| Número de pieza | LPD200P70 | |
| Descripción | PACKAGED HIGH DYNAMIC RANGE PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
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Hay una vista previa y un enlace de descarga de LPD200P70 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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LPD200P70
PACKAGED HIGH DYNAMIC RANGE PHEMT
• FEATURES
♦ 20 dBm Output Power at 1-dB Compression at 18 GHz
♦ 9.5 dB Power Gain at 18 GHz
♦ 16 dB Small Signal Gain at 2 GHz
♦ 0.8 dB Noise Figure at 2 GHz
• DESCRIPTION AND APPLICATIONS
The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom”
Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for high dynamic range. The LPD200’s active areas are
passivated with Si3N4, and the P70 ceramic package is ideal for low-cost, high-performance
applications that require a surface-mount package.
Typical applications include high dynamic range receiver preamplifiers for commercial applications
including Cellular/PCS systems and other types of commercial wireless systems.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C*
Parameter
Symbol
Test Conditions
Min Typ Max Units
Saturated Drain-Source Current**
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
IDSS
P-1dB
G-1dB
PAE
Noise Figure
NF
VDS = 2 V; VGS = 0 V
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS;
PIN = 11 dBm
VDS = 3.3 V; IDS = 25% IDSS;
f=2 GHz
40 85 mA
19 20
dBm
8 9.5
dB
50 %
0.7 dB
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
IMAX
GM
IGSO
VP
|VBDGS|
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -5 V
VDS = 2 V; IDS = 1 mA
IGS = 1 mA
125 mA
60 80
mS
1 15 µA
-0.25 -0.8 -1.5
V
-6 -7
V
Gate-Drain Breakdown
Voltage Magnitude
|VBDGD|
IGD = 1 mA
*frequency=18 GHz, unless otherwise noted
**Formerly binned as: LPD200P70-1 = 40-65 mA and LPD200P70–2 = 66-85 mA
-8
-9
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01
Email: [email protected]
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LPD200P70.PDF ] | |
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