RJE0609JPD Datasheet PDF - Renesas Technology
| Part Number | RJE0609JPD | |
| Description | Silicon P Channel MOS FET Series Power Switching | |
| Manufacturers | Renesas Technology | |
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RJE0609JPD
Silicon P Channel MOS FET Series
Power Switching
Preliminary Datasheet
REJ03G1908-0100
Rev.1.00
Apr 01, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (–6 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance 100 m Max (VGS = –10 V)
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
1
2
3
Current
G
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
D
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
VGSS
ID Note3
IDR
IAP Note 2
EAR Note 2
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg 50
3. It provides by the current limitation lower bound value.
Ratings
–60
–16
2.5
–4
–4
–4
68
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
www.DataSheet.in
Page 1 of 6
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RJE0609JPD
Preliminary
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
−16
−14
−12
−10
−8 VDD = −16 V
−6
−4
−2
0
1 10 100
Shutdown Time of Load-Short Test Pw (ms)
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120 ID = −1 A
dv / dt
VGS ≥ 500 V/ ms
100
0 −2 −4 −6 −8 −10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1shot
pulse
0.01
10 μ
100 μ
θch - c(t) = γs (t) • θch - c
θch - c = 4.17°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Waveform
Vin Monitor
D.U.T.
Vout
Monitor
RL
Vin 50 Ω
–10 V
VDD
= –30 V
Vin
10%
Vout
90%
10%
90%
90%
10%
td(on)
tr td(off)
tf
REJ03G1908-0100 Rev.1.00
Apr 01, 2010
www.DataSheet.in
Page 5 of 6
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RJE0609JPD electronic component. |
| Information | Total 7 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RJE0609JPD.PDF Datasheet ] | |
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