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XZ1002-BD Schematic ( PDF Datasheet ) - M/a-com

Teilenummer XZ1002-BD
Beschreibung highly integrated dual path transmit/receive 3 port core chip
Hersteller M/a-com
Logo M/a-com Logo 




Gesamt 11 Seiten
XZ1002-BD Datasheet, Funktion
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC
Core Chip
Rev 01-Sep-10
Features
• Highly Integrated Core Chip
Chip Device Layout
• Transmit and Receive Modes of Operation
• Integrated T/R Switches, LNA and Driver Amplifier,
6-Bit Phase Shifter and 5-Bit Attenuator
• 21.0 dB Small Signal RX Gain
• +23.5 dBm TX P1dB Compression Point
• Compensated On-Chip Gate Bias Circuit
• Parallel Data Input
• 100% On-Wafer RF, DC and Output Power Testing
Absolute Maximum Ratings
• 100% Visual Inspection to MIL-STD-883 Method 2010 Supply Voltage (Vd)
6V
General Description
The XZ1002-BD is a highly integrated dual path transmit/receive 3
port core chip. It is designed for applications operating within the
8.5 to 11.0 GHz range. The core consists of integrated
transmit/receive switches, LNA, 6-bit phase shifter, 5-bit attenuator
and driver amplifier. The digital control logic allows for parallel
data input so that the phase shifter and attenuator may be
changed instantaneously. The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic solder
die attach process. This device is well suited for phased array
radar applications.
Gate Supply (Vs)
-6V to -4V
Logic Supply (Vl)
0 to 5.5V
Supply Current (Id)
350 mA
Input Power
TBD
Input Power RX
+20 dBm
Input Power RFCOM
+15 dBm
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to MTTF Graph1
Channel Temperature
MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is recommended
to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T=25 oC)
Parameter
Frequency Range (f)
Input Return Loss RX/TX Mode (S11)
Output Return Loss RX/TX Mode (S22)
Receive Small Signal Gain (S21)
Transmit Small Signal Gain (S21)
Receive Output Power for 1 dB Compression Point (P1dB)
Transmit Output Power for 1 dB Compression Point (P1dB)
Receive Noise Figure (NF)
Receive Output Third Order Intercept (OIP3)
Phase Shifter Range (6 Bit, 64 states, 5.625 deg step)
RMS Phase Error
Attenuator Range (5 Bit, 32 states, 0.9 dB step)
RMS Attenuator Amplitude Error
Drain Bias Voltage (Vd1,2,3,4)
Gate Bias Voltage (Vs1,2,3)
Control Voltage High (Va0,1,2,3,4) & (Vp0,1,2,3,4,5)
Control Voltage Low (Va0,1,2,3,4) & (Vp0,1,2,3,4,5)
Supply Current (Id) (Vd=4V, TX mode)
Supply Current (Ia) (Vs=-5V)
Supply Current (Il) (Vl=3.3V)
Units
GHz
dB
dB
dB
dB
dBm
dBm
dB
dBm
deg
deg
dB
dB
VDC
VDC
VDC
VDC
mA
mA
mA
Min.
8.5
0
0
-
-4.0
+2.0
0.0
Typ.
15.0
15.0
21.0
19.0
17.5
23.5
5.2
+28.0
1.5
0.3
+4.0
-5.0
+3.3
-
280
35
9.5
Max.
11
355
28.5
+4.5
+5.0
+0.8
Page 1 of 11
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is
considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has
under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
3F, 3-2 Industry East IX Road, Science-Based Industrial Park
Hsinchu 30075 Taiwan, R.O.C
Tel +886-3-567-9680 / Fax +886-3-567-9433
Visit macomtechasia.com for additional data sheets and product information.
Characteristic data and specifications are subject to change without notice.
©2010 M/A-COM Tech Asia






XZ1002-BD Datasheet, Funktion
DataSheet.in
XZ1002-BD
8.5-11.0 GHz GaAs MMIC
Core Chip
Rev 01-Sep-10
Measurements (cont.)
4V Supply Current in Receive Mode over Temperature
250
240
230
220
210
200
190
180
170
160
150
8 8.5 9 9.5 10 10.5 11
Frequency [GHz]
Ta=10_C
Ta=35_C
Ta=60_C
4V Supply Current in Transmit Mode over Temperature
300
290
Ta=10_C
280 Ta=35_C
Ta=60_C
270
260
8 8.5 9 9.5 10 10.5 11
Frequency [GHz]
DC Power Dissipation in Receive Mode over Temperature
1500
1400
1300
1200
1100
1000
900
800
700
600
500
8 8.5 9 9.5 10 10.5 11
Frequency [GHz]
Ta=10_C
Ta=35_C
Ta=60_C
DC Power Dissipation in Transmit Mode over Temperature
1500
1400
1300
1200
1100
1000
900
800
700
600
500
8 8.5 9 9.5 10 10.5 11
Frequency [GHz]
Ta=10_C
Ta=35_C
Ta=60_C
ADVANCED: Data sheets contain information regarding a product M/A-COM Tech Asia is
considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data sheets contain information regarding a product M/A-COM Tech Asia has
under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Page 6 of 11
3F, 3-2 Industry East IX Road, Science-Based Industrial Park
Hsinchu 30075 Taiwan, R.O.C
Tel +886-3-567-9680 / Fax +886-3-567-9433
Visit macomtechasia.com for additional data sheets and product information.
Characteristic data and specifications are subject to change without notice.
©2010 M/A-COM Tech Asia

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