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STPR810DF Schematic ( PDF Datasheet ) - Lite-On Technology

Teilenummer STPR810DF
Beschreibung SUPER FAST GLASS PASSIVATED RECTIFIERS
Hersteller Lite-On Technology
Logo Lite-On Technology Logo 




Gesamt 2 Seiten
STPR810DF Datasheet, Funktion
LITE-ON
SEMICONDUCTOR
SUPER FAST
GLASS PASSIVATED RECTIFIERS
www.DataSheet4U.com
STPR805DF thru 860DF
REVERSE VOLTAGE - 50 to 600 Volts
FORWARD CURRENT - 8.0 Amperes
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
TO-220AC
B
C
K
PIN
12
I
H
PIN 1
PIN 2
L TO-220AC
M
DIM. MIN. MAX.
D A 14.22 15.88
A B 9.65 10.67
C 2.54 3.43
E
D 5.84 6.86
E 8.26 9.28
F F - 6.35
G 12.70 14.73
G H 4.83 5.33
J I 0.51 1.14
J 0.30 0.64
N K 3.53 4.09
L 3.56 4.83
CASE
M 1.14 1.40
N 2.03 2.92
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TC=100 C
SYMBOL
STPR
805DF
VRRM 50
VRMS 35
VDC 50
STPR
810DF
100
70
100
STPR
815DF
150
105
150
STPR
820DF
200
140
200
STPR
830DF
300
210
300
STPR
840DF
400
280
400
STPR
850DF
500
350
500
STPR
860DF
600
420
600
UNIT
V
V
V
I(AV) 8 A
Peak Forward Surge Current
8.3ms single half-sine-wave
superimposed on rated load (JEDEC Metod)
IFSM
125
A
Maximum Forward Voltage at 8.0A DC
VF
0.95
1.3 1.5 V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =25 C
@TJ =100 C
IR
5 uA
500
Typical Junction
Capacitance (Note 1)
CJ 110
60 pF
Maximum Reverse Recovery Time (Note 2)
TRR
35
50 ns
Typical Thermal Resistance (Note 3)
R0JC
Operating and Storage Temperature Range
TJ ,TSTG
NOTES :1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR 0.25A.
3.Thermal Resistance Junction to Case.
2.5
-55 to +150
C/W
C
REV. 3, 13-Sep-2001, KTGA04





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