(PDF) MS1227 Datasheet - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Número de pieza	MS1227
Descripción	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Fabricantes	Advanced Power Technology
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No Preview Available ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • 30 MHz • 12.5 VOLTS • GOLD METALIZATION • POUT = 20 W MINIMUM • GP = 15 dB • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. www.DataSheet4U.com MS1227 ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance Value 36 18 4.0 4.5 80 +200 -65 to +150 2.2 MS1227.PDF 10-28-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Unit V V V A W °C °C ° C/W 1 page

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PDF MS1227 Data sheet ( Hoja de datos )