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Teilenummer | MS1226 |
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Beschreibung | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS | |
Hersteller | Advanced Power Technology | |
Logo | ||
Gesamt 3 Seiten RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
30 MHz
28 VOLTS
IMD = -28 dB
POUT = 30 WATTS
GP = 18 dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
www.DataSheet4U.com
MS1226
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
Paramete
Co llector-base Voltage
Co llector-emitter Voltage
VEBO
Emit ter-Base Voltage
IC
PDISS
Dev ice Current
Po wer Dissipation
TJ Ju nction Temperature
TSTG
Storage Temperature
r
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
053-7055 Rev - 10-2002
Value
65
36
4.0
4.5
80
+200
-65 to +150
U
nit
V
V
V
A
W
C
C
2.2 C/W
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ MS1226 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
MS1224 | CIT SWITCH | CIT Relay & Switch |
MS1226 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS | Advanced Power Technology |
MS1226 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS | Microsemi |
MS1227 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS | Advanced Power Technology |
Teilenummer | Beschreibung | Hersteller |
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www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |