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MS1226 Schematic ( PDF Datasheet ) - Advanced Power Technology

Teilenummer MS1226
Beschreibung RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Hersteller Advanced Power Technology
Logo Advanced Power Technology Logo 




Gesamt 3 Seiten
MS1226 Datasheet, Funktion
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
30 MHz
28 VOLTS
IMD = -28 dB
POUT = 30 WATTS
GP = 18 dB MINIMUM
COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting for improved ruggedness and
reliability.
www.DataSheet4U.com
MS1226
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
Paramete
Co llector-base Voltage
Co llector-emitter Voltage
VEBO
Emit ter-Base Voltage
IC
PDISS
Dev ice Current
Po wer Dissipation
TJ Ju nction Temperature
TSTG
Storage Temperature
r
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
053-7055 Rev - 10-2002
Value
65
36
4.0
4.5
80
+200
-65 to +150
U
nit
V
V
V
A
W
C
C
2.2 C/W





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